IndiumV3, Chine, Analysis, bibRecord, 000075

The investigation of GaInP solar cell grown by all-solid MBE

Identifieur interne : 000075 ( Chine/Analysis ); précédent : 000074; suivant : 000076

The investigation of GaInP solar cell grown by all-solid MBE

Auteurs : RBID : Pascal:13-0288278

Descripteurs français

Pascal (Inist)
- Cellule solaire, Epitaxie jet moléculaire, Mécanisme croissance, Dépendance température, Eclairement, Dépendance du temps, Photoluminescence, Semiconducteur III-V, Phosphure de gallium, Phosphure d'indium, GaInP, Substrat GaAs, CaSe, AlInP, 8460J, 8115H, 8110A, 7855.

English descriptors

KwdEn :
- Gallium phosphide, Growth mechanism, III-V semiconductors, Illumination, Indium phosphide, Molecular beam epitaxy, Photoluminescence, Solar cell, Temperature dependence, Time dependence.

Abstract

We report on the study of GaInP solar cell grown by solid-state molecular beam epitaxy (MBE) on GaAs. The effect of growth temperature on the device performance is investigated. Under the standard one-sun air-mass 1.5 global (AM1.5G) illumination, an efficiency of 16.6% has been obtained for GaInP single-junction solar cell grown at a high temperature. A worse device performance is observed with decreasing growth temperature. Temperature-dependent and time-resolved photoluminescence results demonstrate that the GaInP optical quality is greatly improved in the case of a high growth temperature. A long PL decay time of GaInP/AlInP structure indicates that AlInP is more promising as the back surface field for the future solar cell performance improvement.

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Links to Exploration step

Pascal:13-0288278

Le document en format XML

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<author><name sortKey="Dai, P" uniqKey="Dai P">P. Dai</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou Industrial Park, Ruoshui Road 398</s1>
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<country>République populaire de Chine</country>
<wicri:noRegion>Suzhou</wicri:noRegion>
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<author><name sortKey="Lu, S L" uniqKey="Lu S">S. L. Lu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou Industrial Park, Ruoshui Road 398</s1>
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<author><name sortKey="Zhu, Y Q" uniqKey="Zhu Y">Y. Q. Zhu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou Industrial Park, Ruoshui Road 398</s1>
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<author><name sortKey="Ji, L" uniqKey="Ji L">L. Ji</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou Industrial Park, Ruoshui Road 398</s1>
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<author><name sortKey="He, W" uniqKey="He W">W. He</name>
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<author><name sortKey="Tan, M" uniqKey="Tan M">M. Tan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou Industrial Park, Ruoshui Road 398</s1>
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<author><name sortKey="Yang, H" uniqKey="Yang H">H. Yang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou Industrial Park, Ruoshui Road 398</s1>
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<author><name sortKey="Arimochi, M" uniqKey="Arimochi M">M. Arimochi</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Advanced Material Laboratories, Sony Corporation, Atsugi Tec. 4-14-1 Asahi-cho</s1>
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<author><name sortKey="Yoshida, H" uniqKey="Yoshida H">H. Yoshida</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Advanced Material Laboratories, Sony Corporation, Atsugi Tec. 4-14-1 Asahi-cho</s1>
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<wicri:noRegion>Atsugi-shi, Kanagawa 243-0014</wicri:noRegion>
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<author><name sortKey="Uchida, S" uniqKey="Uchida S">S. Uchida</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Advanced Material Laboratories, Sony Corporation, Atsugi Tec. 4-14-1 Asahi-cho</s1>
<s2>Atsugi-shi, Kanagawa 243-0014</s2>
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<wicri:noRegion>Atsugi-shi, Kanagawa 243-0014</wicri:noRegion>
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</author>
<author><name sortKey="Ikeda, M" uniqKey="Ikeda M">M. Ikeda</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Advanced Material Laboratories, Sony Corporation, Atsugi Tec. 4-14-1 Asahi-cho</s1>
<s2>Atsugi-shi, Kanagawa 243-0014</s2>
<s3>JPN</s3>
<sZ>8 aut.</sZ>
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</titleStmt>
<publicationStmt><idno type="inist">13-0288278</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0288278 INIST</idno>
<idno type="RBID">Pascal:13-0288278</idno>
<idno type="wicri:Area/Main/Corpus">000826</idno>
<idno type="wicri:Area/Main/Repository">000346</idno>
<idno type="wicri:Area/Chine/Extraction">000075</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Gallium phosphide</term>
<term>Growth mechanism</term>
<term>III-V semiconductors</term>
<term>Illumination</term>
<term>Indium phosphide</term>
<term>Molecular beam epitaxy</term>
<term>Photoluminescence</term>
<term>Solar cell</term>
<term>Temperature dependence</term>
<term>Time dependence</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire</term>
<term>Epitaxie jet moléculaire</term>
<term>Mécanisme croissance</term>
<term>Dépendance température</term>
<term>Eclairement</term>
<term>Dépendance du temps</term>
<term>Photoluminescence</term>
<term>Semiconducteur III-V</term>
<term>Phosphure de gallium</term>
<term>Phosphure d'indium</term>
<term>GaInP</term>
<term>Substrat GaAs</term>
<term>CaSe</term>
<term>AlInP</term>
<term>8460J</term>
<term>8115H</term>
<term>8110A</term>
<term>7855</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We report on the study of GaInP solar cell grown by solid-state molecular beam epitaxy (MBE) on GaAs. The effect of growth temperature on the device performance is investigated. Under the standard one-sun air-mass 1.5 global (AM1.5G) illumination, an efficiency of 16.6% has been obtained for GaInP single-junction solar cell grown at a high temperature. A worse device performance is observed with decreasing growth temperature. Temperature-dependent and time-resolved photoluminescence results demonstrate that the GaInP optical quality is greatly improved in the case of a high growth temperature. A long PL decay time of GaInP/AlInP structure indicates that AlInP is more promising as the back surface field for the future solar cell performance improvement.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
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<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>378</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>The investigation of GaInP solar cell grown by all-solid MBE</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>The 17th International Conference on Molecular Beam Epitaxy</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>DAI (P.)</s1>
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<fA11 i1="07" i2="1"><s1>YANG (H.)</s1>
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<fA11 i1="08" i2="1"><s1>ARIMOCHI (M.)</s1>
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<fA11 i1="09" i2="1"><s1>YOSHIDA (H.)</s1>
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<fA11 i1="10" i2="1"><s1>UCHIDA (S.)</s1>
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<fA11 i1="11" i2="1"><s1>IKEDA (M.)</s1>
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<s9>ed.</s9>
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<fA12 i1="02" i2="1"><s1>SUEMASU (Takashi)</s1>
<s9>ed.</s9>
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<fA12 i1="03" i2="1"><s1>OKUMURA (Hajime)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou Industrial Park, Ruoshui Road 398</s1>
<s2>Suzhou</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
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<fA15 i1="01"><s1>University of Tsukuba</s1>
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<fA20><s1>604-606</s1>
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<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We report on the study of GaInP solar cell grown by solid-state molecular beam epitaxy (MBE) on GaAs. The effect of growth temperature on the device performance is investigated. Under the standard one-sun air-mass 1.5 global (AM1.5G) illumination, an efficiency of 16.6% has been obtained for GaInP single-junction solar cell grown at a high temperature. A worse device performance is observed with decreasing growth temperature. Temperature-dependent and time-resolved photoluminescence results demonstrate that the GaInP optical quality is greatly improved in the case of a high growth temperature. A long PL decay time of GaInP/AlInP structure indicates that AlInP is more promising as the back surface field for the future solar cell performance improvement.</s0>
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<fC02 i1="01" i2="X"><s0>001D06C02D1</s0>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>08</s5>
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<s5>15</s5>
</fC03>
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<s5>15</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Galio fosfuro</s0>
<s5>15</s5>
</fC03>
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<s5>16</s5>
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<s5>16</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>GaInP</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Substrat GaAs</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>CaSe</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>AlInP</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>8460J</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>8115H</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>8110A</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>7855</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>273</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE2012 International Conference on Molecular Beam Epitaxy</s1>
<s2>17</s2>
<s3>Nara JPN</s3>
<s4>2012-09-23</s4>
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   |clé=     Pascal:13-0288278
   |texte=   The investigation of GaInP solar cell grown by all-solid MBE
}}

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The investigation of GaInP solar cell grown by all-solid MBE

The investigation of GaInP solar cell grown by all-solid MBE

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